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Reactive sputtering deposition and characterization of zinc nitride and oxy-nitride films for electronic and photovoltaic applications
Table of Contents
Abstract
Acknowledgements
Table of Contents
List of Tables
List of Figures
List of Abbreviations
List of Symbols
1 Introduction
2 Background and literature review
2.1 Nitride compounds
2.2 Zinc nitride
2.3 Zinc oxy-nitrides and nitrogen-doped zinc oxides
2.4 Fabrication methods
2.4.1 Direct chemical reaction methods
2.4.2 Evaporation and laser ablation methods
2.4.3 Chemical vapor deposition methods
2.4.4 Epitaxial methods
2.4.5 Plasma-based deposition methods
3 Experimental: Fabrication and the related characterization techniques
3.1 Reactive radio frequency magnetron sputtering
3.2 Characterization techniques relevant to our work
4 Results and discussions…
4.1 Characterization of zinc nitride and zinc oxy-nitride thin films
4.1.1 Micro-structure and crystallinity
4.1.2 Surface morphology
4.1.3 Chemical composition and bonding states
4.1.4 Electrical properties
4.1.5 Optical properties
4.2 Theoretical modeling work of zinc nitride material
4.2.1 Optimization of pure zinc nitride structure
4.2.2 Atomic geometry of pure and defective Zn3N2
4.2.3 Study on native defects
4.2.4 Study on non-native defects: copper family as possible p-type dopants
4.3 Fabrication of device-related structures
4.3.1 Rectifying p-n junction and photovoltaic effect
4.3.1.1 Property optimization of p-type and n-type layers
4.3.1.2 Fabrication and characterization of a p-n junction
4.3.2 Rectifying metal-semiconductor junctions
4.3.3 Metal-insulator-semiconductor junctions
5 Concluding remarks and future work
5.1 Concluding remarks
5.2 Future work
5.3 List of publications resulting from this research
References Bài viết liên quan
